10 650V silicon carbide (SiC) Schottky diodes feature merged PIN Schottky (MPS) design.

Are designed to increase efficiency of high-frequency applications by reducing switching losses regardless of effects from temp. variances, permitting diodes to operate at higher temp. MPS design of diodes shields electric field from Schottky barrier to reduce leakage currents, while increasing surge current capability via hole injection. Handle same level of current as pure silicon Schottky devices, with slight increase in forward voltage drop. Are for PFC and output rectification in flyback power supplies and LLC converters for servers, telecom equipment, UPS, and solar inverters. Come in current ratings from 4A to 40A in 2L TO-220AC and TO-247AD 3L packages and offer temp. operation to +175°C.

Vishay Intertechnology
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