T5221 high-throughput memory tester for NAND flash devices can perform functional testing of chips while reportedly delivering accurate timing, repeatability and failure detection.

Data transfer speeds are more than five times faster than predecessor; improves production efficiencies for wafer sorting, built-in self-testing and wafer-level burn-in. Optimized for use with a multi-wafer prober. System controller can simultaneously manage up to 12 test stations, each with independent testing capabilities. Combined-array architecture reduces test times, while parallelism allows it to perform wafer-level testing on up to 1,152 devices simultaneously. Test stations are housed within multi-wafer prober. Can be docked with 12-stage multi-wafer prober for use in mass production or single- or dual-wafer probers in engineering environments. Probe card design has been simplified. Incorporates combined performance board. Features two driver pins and one I/O pin for each device under test, as well as flexible algorithmic pattern generator, waveform generator and self-diagnostic functions. Optional upgrade is available to boost power-supply level as high as 28V while measuring small currents down to one nanoampere (nA). Fully compatible with legacy memory solutions.

Advantest Corp.
advantest.com