Rohm Introduces Hybrid IGBTs with Built-In SiC Diode
Published: 20 July 2021
RGWxx65C series of hybrid IGBTs have an integrated 650V SiC Schottky barrier diode in the IGBT feedback block as a freewheeling diode that has almost no recovery energy, thus minimal diode switching loss.
Significantly reduces IGBT turn-on loss. Up to 67% lower loss over conventional IGBTs and 24% lower loss compared with Super Junction MOSFETs (SJ MOSFETs) when used in vehicle chargers. Are qualified under AEC-Q101 (automotive reliability). For high-power automotive and industrial applications such as photovoltaic power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles (xEVs).
Rohm Semiconductor
