Rohm Semiconductor's GNP1070TC-Z and GNP1150TCA-Z are 650V GaN (Gallium Nitride) HEMTs optimized for a wide range of power supply systems applications.

Are said to deliver industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs, translating to higher efficiency in power supply systems. Built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability, and high-speed switching characteristics also contribute to greater miniaturization of peripheral components.

Rohm Semiconductor

www.rohm.com 

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