Designed to test microelectronic devices, MEMS, photonic and other small components, the 5848 MicroTester provides precise load and displacement measurement capability and claims an excellent cyclic performance.
Applications include semiconductor die shear and pull tests, tensile testing of fine wires, flex testing of circuit boards and substrates, and peel tests of thin films and substrates. Load capacity of 2 kN, provides sub-micron position measurement accuracy and ultra high-precision load and position control for static testing of micro-components and cyclic fatigue testing.
Includes an extremely rigid frame, for horizontal or vertical orientations, and an encoder mounted directly on the loading actuator for position measurement resolution of better than 20 nanometers.
Instron, instron.com
AlSiC (Aluminum Silicon Carbide) metal matrix composite for optoelectronic housings and lids enables a tailored coefficient of thermal expansion (CTE), offering compatibility with various electronic devices and assemblies. Unlike traditional housing materials, the isotropic CTE value of AlSiC can be adjusted for specific applications by modifying the Al-metal/SiC-particulate ratio. CTE matching capabilities ensure alignment and precision.
Exhibits high thermal conductivity for thermal dissipation, prevents bowing and flexing of packaging and substrate material that can lead to failure. Traditional housing materials with lower thermal dissipation can cause delamination, leading to air gaps and poor reliability.
The near and net-shape fabrication process produces the composite material and fabricates the product geometry, allowing rapid prototyping for high-volume thermal management solutions. Unrestricted geometry enables the inclusion of design features such as septums, walls and radial features. Casting process allows integration of high thermal conductivity inserts (>1000 W/mK) or cooling tubes.
CPS Corp., alsic.com
The new WaferRepair platform addresses the technology requirements associated with the reliable, cost-effective laser fuse processing of high density DRAM and other memory devices using redundancy, as well as laser programming for device customization and repair of non-memory devices. Delivers refinements in beam placement accuracy, laser spot size and ultra-fine, ultra-stable energy control that enable the processing of extremely tight-pitch fuse structures for yield enhancement. Feature the system precision required by 90-nm and smaller design rules.
Based on the new platform, the M450 fuse processing system features a laser spot size of 1.4 µm. The M455 has a laser spot size of 0.7 µm, enabling aggressive fuse pitch shrinks below 2 µm. Both process fuses at a rate of 60,000 Hz with beam-positioning accuracy of +/- 0.150 µm.
GSI Lumonics Inc., gsilumonics.com